data sheet 1 05.99 sipmos ? small-signal transistor ? n channel ? enhancement mode ? v gs(th) = 1.4 ...2.3 v pin 1 pin 2 pin 3 g s d type v ds i d r ds(on) package marking bss 145 65 v 0.22 a 3.5 w sot-23 sbs type ordering code tape and reel information bss 145 q67000-s132 e6327 maximum ratings parameter symbol values unit drain source voltage v ds 65 v drain-gate voltage r gs = 20 k w v dgr 65 gate source voltage v gs 20 esd sensitivity (hbm) as per mil-std 883 class 1 continuous drain current t a = 31 ?c i d 0.22 a dc drain current, pulsed t a = 25 ?c i dpuls 0.88 power dissipation t a = 25 ?c p tot 0.36 w bss 145
bss 145 data sheet 2 05.99 maximum ratings parameter symbol values unit chip or operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip to ambient air r thja 350 k/w therminal resistance, chip-substrate- reverse side 1) r thjsr 285 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 1) for package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 25 ?c v (br)dss 65 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 1.4 2 2.3 zero gate voltage drain current v ds = 65 v, v gs = 0 v, t j = 25 ?c v ds = 65 v, v gs = 0 v, t j = 125 ?c i dss - - 8 0.1 50 0.5 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-state resistance v gs = 10 v, i d = 0.2 a v gs = 3.5 v, i d = 0.02 a r ds(on) - - - 1.6 6.5 3.5 w
bss 145 data sheet 3 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = 0.2 a g fs 0.12 0.2 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 60 80 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 15 20 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 5 8 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 0.2 a r gs = 50 w t d(on) - 5 8 ns rise time v dd = 30 v, v gs = 10 v, i d = 0.2 a r gs = 50 w t r - 6 10 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 0.2 a r gs = 50 w t d(off) - 12 16 fall time v dd = 30 v, v gs = 10 v, i d = 0.2 a r gs = 50 w t f - 15 20
bss 145 data sheet 4 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 ?c i s - - 0.22 a inverse diode direct current,pulsed t a = 25 ?c i sm - - 0.88 inverse diode forward voltage v gs = 0 v, i f = 0.4 a, t j = 25 ?c v sd - 0.9 1.4 v
bss 145 data sheet 5 05.99 power dissipation p tot = | ( t a ) 0 20 40 60 80 100 120 ?c 160 t a 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 w 0.40 p tot drain current i d = | ( t a ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 ?c 160 t a 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 a 0.24 i d safe operating area i d =f( v ds ) parameter : d = 0.01, t c =25?c drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 ?c 160 t j 58 60 62 64 66 68 70 72 74 v 77 v (br)dss
bss 145 data sheet 6 05.99 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s , t j = 25 ?c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 a 0.50 i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l p tot = 0w l 10.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: t p = 80 s, t j = 25 ?c 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 a 0.38 i d 0 1 2 3 4 5 6 7 8 9 w 11 r ds (on) v gs [v] = a 2.5 v gs [v] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 a 1.0 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 a 0.9 i d 0.00 0.05 0.10 0.15 0.20 0.25 0.30 s 0.40 g fs
bss 145 data sheet 7 05.99 drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = 0.2 a, v gs = 10 v -60 -20 20 60 100 ?c 160 t j 0 1 2 3 4 5 6 7 w 9 r ds (on) typ 98% gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 ?c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs =0v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ds 0 10 1 10 2 10 3 10 pf c c rss c oss c iss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -3 10 -2 10 -1 10 0 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
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